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姓名:钱昕晔 |
职称: 副研究员 |
地址:江苏省镇江市学府路301号 |
Telephone: |
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E-mail:qianxinye207@163.com |
研究方向: |
锂硫电池硫基正极材料,锂硫电池新型隔膜改性 锂离子电池金属氧化物负极材料 硅基光电子材料 |
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教育经历: |
2008.9-2013.6 南京大学 硕博 博士学位 2002.9-2007.6 同济大学 本科 学士学位
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教学经历: |
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项 目: |
江苏大学高级人才启动基金(14JDG060),主持 江苏省博士后基金(1402196C),主持 长沙矿冶研究院创新项目子课题,主持 国家自然科学基金面上项目(批准号51474113),参与 国家自然科学基金面上项目(批准号51474037),参与 国家重点基础研究发展计划项目973计划(项目编号:2006CB932202),参与,已结题 国家重点基础研究发展计划项目973计划(项目编号:2010CB934402),参与,已结题 |
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奖 项: |
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学术组织和学术活动: |
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论文专著专利: |
1. The Role of Nitridation of nc-Si Dots for Improving Performance of nc-Si Nonvolatile Memory Xin-Ye Qian, Kun-Ji Chen*, Yue-Fei Wang, Xiao-Fan Jiang, Zhong-Yuan Ma, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang Journal of Non-Crystalline Solids 358, 2344-2347 (2012) 2. Room Temperature Multi NDR peaks in nc-Si Quantum Dots MOS Staking Structures for Multiple Value Memory and logics Xin-Ye Qian, Kun-Ji Chen*, Jian Huang, Yue-Fei Wang, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang Chinese Physics Letters 30, 077303 (2013) 3. Performance improvement of nc-Si nonvolatile memory by novel design of tunnel and control layer Xin-Ye Qian; Kun-Ji Chen; Zhong-Yuan Ma; Xian-Gao Zhang; Zhong-Hui Fang; Guang-Yuan Liu; Xiao-Fan Jiang; Xin-Fan Huang; 2010 10th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), 944-946 (2010) 4. Multipeak Negative Differential Resistance Effects in Nanocrystalline Si Stacking MOS Structures Xin-Ye Qian, Kun-Ji Chen*, Jian Huang, Yue-Fei Wang, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang 2012 11th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), S59_03 (2010) 5. Resistive Switching Mechanism in Silicon Highly Rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model Yuefei Wang, Xinye Qian, Kunji Chen, Zhonghui Fang, Wei Li, and Jun Xu Appl. Phys. Lett. 102, 042103 (2013) 6. The Development of Nanometer Solid State Storage Memory Kun-Ji Chen*, Xin-Ye Qian, Yue-Fei Wang, Zhong-Hui Fang, Xin-Fan Huang, Zhong-Yuan Ma 2012 11th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), S59_01 (2010) 7. Fabrication of Silicon Highly-rich SiOx(x<0 .75) and its novel resistive switching behaviors Yue-Fei Wang, Xin-Ye Qian, Kun-Ji Chen*, Zhong-Hui Fang, Wei Li, Jun Xu 2012 11th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), S36_02 (2012) 8. Coulomb oscillations effect in dual gate controlled silicon nanowire Zhang XG , Fang ZH, Chen KJ, Qian XY, Liu GY, Xu J, Huang XF, He F ACTA PHYSICA SINICA 60, (2011) 9. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment Zhang XG , Fang ZH, Chen KJ, Qian XY, Liu GY, Xu J, Huang XF, et al. Chinese Physics Letters 27, 087301 (2010) 10. Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires Fang ZH, Zhang XG, Chen KJ, Qian XY, Xu J, Huang XF, He F Chinese Physics Letters 27, 057304 (2010)
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